IN A NUTSHELL 🚀 Researchers at Peking University developed a bismuth-based transistor that outperforms silicon chips by 40% in speed. 💡 The innovation consumes 10% less energy, potentially allowing China to bypass silicon technology constraints. 🔬 The team’s design employs a GAAFET structure, enhancing electron flow and reducing energy loss. 🌍 This breakthrough could significantly … Continue reading “They’ve Beaten Silicon By 40 Percent”: Peking University Unveils Bismuth-Based Transistor Using GAAFET Design To Boost Speed And Cut Energy Use